A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics
Source abstract
Abstract
To investigate the performance degradation of a vertical-cavity surface-emitting laser (VCSEL) caused by self-heating effects, a 940 nm VCSEL with a buried tunnel junction (BTJ) and an aperture size of 10 μm was designed. The BTJ-type VCSEL achieves a 39.38% higher peak power (19.96 mW), a 3.26% higher peak power conversion efficiency (46.41%), and a 24.97% lower differential resistance (37.32 Ω), and the thermal rollover current is delayed to 6.07 mA than conventional design. When the injection current is 20 mA, the BTJ-type VCSEL exhibits a low temperature and Auger recombination rate, while the stimulated recombination rate is high. In addition, the BTJ-type VCSEL shows a small far-field divergence angle and good beam quality. Therefore, the designed BTJ-type VCSEL offers valuable guidance for the preparation of high-reliability and long-lifetime VCSEL.
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Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices · Photonic and Optical Devices · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology 1 , Taiyuan 030024,
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering 2 , Taiyuan, Shanxi 030024,
Xi’an Key Laboratory of Compound Semiconductor Materials and Devices, School of Physics & Information Science, Shaanxi University of Science and Technology 3 , Xi’an 710021,
Funding
Shanxi–Zheda Institute of Advanced Materials and Chemical Engineering · National Natural Science Foundation of China · Natural Science Basic Research Program of Shaanxi Province
References (26)
Show source-provided references
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