AlN grown by CBE for power device applications
Source abstract
Abstract
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, respectively, at a growth temperature below 600 °C. The thermal conductivity and breakdown field of 10 µm thick AlN epilayers were measured to be 57 W/(m.K) and 1.04 106 V/cm, respectively. These results demonstrate the potential of CBE as an alternative growth method for the development of thick AlN layers in high power device applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke 1 , 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
GaN Systems 2 , 1145 Innovation Drive, Ottawa, Ontario K2K 3G8, Canada
References (49)
Show source-provided references
1. A review of GaN on SiC high electron-mobility power transistors and MMICs10.1109/TMTT.2012.2187535 ↗
2. A review of GaN-based optoelectronic devices on silicon substrate10.1007/s11434-014-0169-x ↗
3. Group III nitride and SiC based MEMS and NEMS: Materials properties, technology and applications10.1088/0022-3727/40/20/S19 ↗
4. Influence of AlN growth temperature on the electrical properties of buffer layers for GaN HEMTs on silicon10.1002/pssa.201700637 ↗
5. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate10.1109/DRC.2010.5551907 ↗
6. Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films10.1063/1.1785850 ↗
7. The intrinsic thermal conductivity of AIN10.1016/0022-3697(87)90153-3 ↗
8. Hot-electron-induced degradation in BCB- and SiN-passivated PHEMTs10.1109/TDMR.2007.907413 ↗
9. Aluminum nitride for heatspreading in RF IC’s10.1016/j.sse.2008.04.009 ↗
10. Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure10.1063/1.4748048 ↗
11. Aluminum nitride thin film growth and applications for heat dissipation10.1016/j.surfcoat.2014.11.060 ↗
12. Differential 3ω method for measuring thermal conductivity of AlN and Si3N4 thin films10.1016/j.tsf.2015.03.031 ↗
13. Thermal conductivity of AlN thin films deposited by RF magnetron sputtering10.1016/j.mssp.2011.04.007 ↗
14. Achieving high thermal conductivity from AlN films deposited by high-power impulse magnetron sputtering10.1088/0022-3727/47/35/355303 ↗
15. Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature10.1063/1.4903220 ↗
16. Optical and thermal characterization of AlN thin films deposited by pulsed laser deposition10.1016/s0169-4332(01)00767-x ↗
17. AlN thin film grown on different substrates by hydride vapor phase epitaxy10.1016/j.jcrysgro.2015.11.040 ↗
18. AlN grown on Si(1 1 1) by ammonia-molecular beam epitaxy in the 900–1200 °C temperature range10.1016/j.jcrysgro.2017.08.006 ↗
19. Microstructure and thermal conductivity of epitaxial AlN thin films10.1016/0040-6090(94)90324-7 ↗
20. A combined growth process for state-of-the-art GaN on silicon10.1002/pssa.201600449 ↗
21. Surface morphology of AlN nucleation layer grown on Si by MOCVD10.4028/www.scientific.net/AMR.1120-1121.391 ↗
22. Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD10.1109/SMELEC.2014.6920785 ↗
23. Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD10.1016/j.matlet.2013.09.096 ↗
24. Hot-wall MOCVD for highly efficient and uniform growth of AlN10.1021/cg8005663 ↗
25. New device and method for measuring thermal conductivity of thin-films10.1016/S0019-0578(07)60214-6 ↗
26. Growth of AlN by metalorganic molecular beam epitaxy10.1063/1.114684 ↗
27. Growth of high-quality AlN at high growth rate by high-temperature MOVPE10.1002/pssc.200565357 ↗
28. Low temperature AlN growth by MBE and its application in HEMTs10.1016/j.jcrysgro.2015.03.039 ↗
29. High growth rate of III–V compounds by free carrier gas chemical beam epitaxy10.1116/1.587985 ↗
30. Development of GaAs space solar cells by high growth rate MOMBE/CBE10.1016/S0022-0248(99)00602-8 ↗
31. Focused gas beam injection for efficient ammonia-molecular beam epitaxial growth of III-nitride semiconductors10.1116/1.4943921 ↗
32. Simultaneous determination of thermal conductivities of thin film and substrate by extending 3ω-method to wide-frequency range10.1016/j.apsusc.2007.05.020 ↗
33. Heat transport in thin dielectric films10.1063/1.363923 ↗
34. Gas-source molecular beam epitaxy of III–V nitrides10.1016/S0022-0248(97)00077-8 ↗
35. Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices10.1016/S0925-9635(98)00263-5 ↗
36. Molecular beam epitaxy of group-III nitrides on silicon substrates: Growth, properties and device applications10.1002/1521-396x(200112)188:2<501::aid-pssa501>3.0.co;2-6 ↗
37. MOVPE growth of high-quality AlN10.1016/j.jcrysgro.2006.09.046 ↗
38. Growth conditions and surface morphology of AlN MOVPE10.1016/j.jcrysgro.2008.07.098 ↗
39. Kinetics of metal Organic−Ammonia adduct decomposition: Implications for group-III nitride MOCVD10.1021/jp054380s ↗
40. Low temperature deposition of AIN films by an alternate supply of trimethyl aluminum and ammonia10.1002/cvde.19960020612 ↗
41. Experimental study of trimethyl aluminum decomposition10.1016/j.jcrysgro.2017.05.020 ↗
42. Growth and characterization of aluminum nitride coatings prepared by pulsed-direct current reactive unbalanced magnetron sputtering10.1016/j.tsf.2007.10.129 ↗
43. Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering10.1016/S0040-6090(00)01914-3 ↗
44. A reaction-transport model for AlGaN MOVPE growth10.1016/S0022-0248(98)00649-6 ↗
45. AlN film deposition as a semiconductor device10.15446/ing.investig.v33n2.39505 ↗
46. AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE10.1049/el:20020060 ↗
47. Zero-temperature-coefficient SAW devices on AlN epitaxial films10.1109/T-SU.1985.31647 ↗
48. Deposition of A1N thin films by magnetron reactive sputtering10.1016/0040-6090(81)90482-X ↗
49. Electrical properties of AlN thin films prepared by ion beam enhanced deposition10.1016/j.surfcoat.2004.08.169 ↗