Analyzing oxygen and silicon incorporation in GaN microstructures composed of c-planes and angled facets by confocal magneto-photoluminescence microscopy
Source abstract
Abstract
Unintentionally doped impurities formed in the microstructures of free-standing GaN grown with facets were studied using confocal magneto-photoluminescence (PL) microscopy. Donor-bound exciton related peaks in PL spectra and their magnetic behavior allowed us to distinguish typical donor impurity atoms, such as silicon and oxygen. Combining this technique with confocal microscopy also revealed the spatial distribution of the impurities. The results showed that angled facets tend to incorporate oxygen. Moreover, even facets angled at a few degrees with respect to the (0001) surface cause a noticeable change in oxygen incorporation on the order of 1 × 1016 cm−3.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Tohoku University 1 , Sendai 980-8578, Japan
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 2 , Sendai 980-8577, Japan
Center for Spintronics Research Network, Tohoku University 3 , Sendai 980-8577, Japan
Funding
Ministry of Education, Culture, Sports, Science and Technology · Asahi Glass Foundation · the Center for Spintronics Research Network
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