journal article·2021-04-01Open access

High power GaN-based blue superluminescent diodes with low spectral modulation

Wei Xiong, Lei Hu, Jianping Liu, Lingrong Jiang, Aiqin Tian, Liqun Zhang, Masao Ikeda, Hui Yang

AIP Advances· Volume 11· Issue 4

Abstract

We present high-power GaN-based blue superluminescent diodes (SLDs) with bend waveguides. The devices were grown on a c-plane GaN free-standing substrate by metal–organic chemical vapor deposition. Studies on waveguide design were conducted to increase the output power of SLDs. Low spectral modulation had been obtained by optimizing the bend angle of the ridge waveguide. An output power as high as 510 mW had been obtained for SLDs emitting at 441 nm with a full width at half maximum of 4.4 nm.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Photonic and Optical Devices · Optical Coatings and Gratings

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS) 1 , Suzhou 215123, China

Nano Science and Technology Institute, University of Science and Technology of China 2 , Suzhou 215123, China

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 3 , Hefei 230026, China

Funding

National Natural Science Foundation of China · National Key Research and Development Program of China · Natural Science Foundation of Jiangsu Province · China Postdoctoral Science Foundation

References (17)

Show source-provided references
1. Jpn. J. Appl. Phys., Part 1 · 2013 · 52 · 08JH0710.7567/jjap.52.08jh07 ↗
2. IEEE J. Sel. Top. Quantum Electron. · 2017 · 23 · 110.1109/jstqe.2017.2732941 ↗
3. Opt. Express · 2018 · 26 · 2635510.1364/oe.26.026355 ↗
4. Appl. Phys. Lett. · 2009 · 95 · 08110710.1063/1.3202786 ↗
5. Proc. SPIE · 2016 · 9748 · 97481V10.1117/12.2212699 ↗
6. Photonics Res. · 2017 · 5 · A3010.1364/prj.5.000a30 ↗
7. Opt. Express · 2016 · 24 · 967310.1364/oe.24.009673 ↗
8. Appl. Phys. Express · 2013 · 6 · 09210210.7567/apex.6.092102 ↗
9. Appl. Phys. Express · 2012 · 5 · 08210510.1143/apex.5.082105 ↗
10. Opt. Lett. · 2016 · 41 · 260810.1364/ol.41.002608 ↗
11. Semicond. Sci. Technol. · 2012 · 27 · 05500310.1088/0268-1242/27/5/055003 ↗
12. J. Lightwave Technol. · 1989 · 7 · 33610.1109/50.17776 ↗
13. J. Lightwave Technol. · 1992 · 10 · 21510.1109/50.120577 ↗
14. Fiber Integr. Opt. · 2005 · 24 · 2510.1080/01468030590887650 ↗
15. 2018 · 129
16. IEEE J. Sel. Top. Quantum Electron. · 2010 · 16 · 101510.1109/jstqe.2009.2038720 ↗
17. Proc. SPIE · 2002 · 4648 · 12510.1117/12.462649 ↗