journal article·2015-10-01Open access

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Zujun Wang, Wei Chen, Baoping He, Zhibin Yao, Zhigang Xiao, Jiangkun Sheng, Minbo Liu

AIP Advances· Volume 5· Issue 10

Abstract

The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (VS) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The VS degradation levels depend on the dose rates. The VS degradation mechanism induced by dose rate and annealing effects is analyzed. The VS at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during 60Co γ radiation. The VS degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs.
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Research context

OpenAlex topics: CCD and CMOS Imaging Sensors · Integrated Circuits and Semiconductor Failure Analysis · Radiation Effects in Electronics

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Affiliations

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024 China

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