journal article·2024-03-01Open access

Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes

Qian Yang, Jing Yang, Haoran Long, Zongshun Liu, Lihong Duan, Degang Zhao

AIP Advances· Volume 14· Issue 3

Abstract

The nanopipes in GaN films grown on sapphire substrates using metal-organic chemical vapor deposition were identified as leakage-related defects through investigations by PeakForce tunneling atomic force microscopy. An insertion layer of n-Al0.03Ga0.97N can prevent nanopipes from extending, thereby reducing the leakage current of Schottky diodes. By analyzing the element’s distribution in and out of nanopipes on epitaxial wafers, it is inferred that segregation of Ga around nanopipes may be responsible for the leakage.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, China

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences 2 , Beijing 100049, China

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 4 , Beijing 100049, China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Strategic Priority Research Program of Chinese Academy of Sciences · Youth Innovation Promotion Association of the Chinese Academy of Sciences

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