journal article·2024-01-01Open access

Linearization of the tunneling magnetoresistance sensors through a three-step annealing process

Yuzu Sun, Qingtao Xia, Dandan Zhang, Qianqian Mou, Yunpeng Li, Libo Xie, Shaojie Guang, Zhiqiang Cao, Dapeng Zhu, Weisheng Zhao

AIP Advances· Volume 14· Issue 1

Abstract

For tunneling magnetoresistance (TMR) sensors using magnetic tunnel junctions (MTJ), the sensor output linearization is of great importance for practical applications. The current study employs a three-step magnetic annealing procedure for linearizing the double-pinned MTJs, setting the magnetization of the free layer to be orthogonal to that of the reference layer. Compared to the traditional two-step annealing procedure, the three-step annealing procedure benefits from a lower annealing temperature and excellent linearity performance. Utilizing the three-step annealing procedure, the sensitivity and the detectivity of 1.57 mV/V/Oe and 29.3 nT Hz0.5 @ 10 Hz, respectively, was achieved in a full Wheatstone bridge TMR sensor. Our results reveal a new pathway for linearization of the TMR sensors through three-step annealing process.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magnetic Field Sensors Techniques · Physics of Superconductivity and Magnetism

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University 1 , Beijing 100191, China

Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University 2 , Qingdao 266600, China

Zhongfa Aviation Institute of Beihang University, Beihang University 3 , Hangzhou 311115, China

Funding

National Key Research and Development Program of China · Key Reasearch and Development Program of Shangdong Province · The Taishan Scholars Program · Fundamental Research Funds for the Central Universities of China

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