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journal article·2023-11-01Open access

Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation

Rui Li, Yudong Li, Heini Maliya, Ruiqin Zhang, Xin Wang, Yi Jiang, Dong Zhou, Qi Guo

AIP Advances· Volume 13· Issue 11
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Source abstract

Abstract

The displacement damage effect of 10 MeV proton radiation on a high-speed InGaAs PIN photodiode has been experimentally investigated to evaluate the stability of the device in a space radiation environment. The results show that the dark current and low-frequency noise of the device increase significantly after irradiation, while the capacitance of the device decreases slightly after irradiation, where the spectral response parameters are less affected by irradiation. The increase in dark current is essentially linear with the displacement damage dose. Finally, the effect of proton irradiation on the optical communication system is simulated and the results show that the bit error rate of the system increases with the increase in irradiation fluence, which seriously affects the sensitivity of the optical communication system.
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Research context

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Advanced Optical Sensing Technologies · Radiation Effects in Electronics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 1 , No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China

School of Physics Science and Technology, Xinjiang University 2 , No. 666 Shengli Road, Tianshan District, Urumqi 830046, People’s Republic of China

University of Chinese Academy of Sciences 3 , No. 19-A Yuquan Road, Shijingshan District, Beijing 100049, People’s Republic of China

Funding

National Natural Science Foundation of China · Xinjiang Key Laboratory of Electronic Information Materials and Devices · Youth Innovation Promotion Association of the Chinese Academy of Sciences

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