High mobility sputtered InSb film by blue laser diode annealing
Source abstract
Abstract
InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Engineering, University of the Ryukyus 1 , 1 Senbaru, Okinawa 903-0213, Japan
Graduate School of Information Science and Electrical Engineering, Kyushu University 2 , Fukuoka 819-0395, Japan
Department of Environmental Science and Engineering, Kochi University of Technology 3 , Kochi 782-8502, Japan
Department of Display, Hoseo University 4 , Cheonan, Asan 31499, South Korea
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