journal article·2023-03-01Open access

Mechanism for self-compensation in heavily carbon doped GaN

Zhaohua Shen, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen

AIP Advances· Volume 13· Issue 3

Abstract

Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrations of C defects with different atomic configurations are calculated by taking the configurational entropy into account. The result shows that the concentrations of tri-carbon complexes (CNCiCN, where Ci refers to interstitial carbon) and dicarbon complexes (CNCGa) cannot be neglected under heavy doping conditions. The concentration of CNCiCN can even exceed that of CN at sufficiently high doping levels. Especially, we suggest that it is the tri-carbon complex CNCiCN, instead of the commonly expected CGa, that acts as the self-compensation centers in semi-insulating GaN under heavy C doping conditions. The results provide a fresh look on the long-standing problem about the self-compensation mechanisms in C doped GaN.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University 1 , Beijing 100871, People’s Republic of China

Peking University Yangtze Delta Institute of Optoelectronics 2 , Nantong 226010, China

Beijing Computational Science Research Center 3 , Beijing 100193, Jiangsu, People’s Republic of China

Collaborative Innovation Center of Quantum Matter 4 , Beijing 100871, People’s Republic of China

Department of Physics, Beijing Normal University 5 , Beijing 100875, People’s Republic of China

Funding

National Natural Science Foundation of China · National Key Research and Development Program of China · Beijing Municipal Science and Technology Project · Key Research and Development Program of Guangdong Province · National Safety Academic Fund

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