Evidence of ambient doping in pentacene rectifying diodes
Source abstract
Abstract
Organic rectifying diodes (ORDs) are a structurally simple yet functionally versatile element for advanced electronics. However, their operating principle, in association with the specificities of organic materials, is not well conceptualized. This study provides a comprehensive insight into a fundamental device phenomenon in ORDs, namely, ambient doping, and reveals for the first time its various footprints strongly affecting multiple in-device locations and operating regimes. High-performance pentacene-based diodes are fabricated and characterized in detail through current–voltage analysis, capacitance–voltage measurements, and broadband impedance spectroscopy. A highly analytical and correlative treatment of the whole data results in precise extraction of critical charge-injection, transport, and doping parameters, as well as a validated circuit model that systematically decouples the contact and bulk electronic processes governing the operation of ORDs.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Advanced Memory and Neural Computing · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Engineering, Gachon University , Seongnam 13120, Republic of Korea
Funding
National Research Foundation of Korea · Gachon University
References (36)
Show source-provided references
1. J. Mater. Chem. C · 2017 · 5 · 459810.1039/c7tc00664k ↗
2. Nat. Mater. · 2005 · 4 · 59710.1038/nmat1434 ↗
3. Adv. Electron. Mater. · 2016 · 2 · 150028210.1002/aelm.201500282 ↗
4. IEEE Electron Device Lett. · 2018 · 39 · 173610.1109/led.2018.2871847 ↗
5. Adv. Mater. · 2008 · 20 · 102310.1002/adma.200701550 ↗
6. Semicond. Sci. Technol. · 2017 · 32 · 12300210.1088/1361-6641/aa89ce ↗
7. MRS Commun. · 2017 · 7 · 75510.1557/mrc.2017.100 ↗
8. Adv. Sci. · 2019 · 6 · 180165310.1002/advs.201801653 ↗
9. Nanoscale Adv. · 2020 · 2 · 181110.1039/d0na00100g ↗
10. IEEE J. Electron Devices Soc. · 2020 · 8 · 140410.1109/jeds.2020.3020312 ↗
11. ChemPhysChem · 2004 · 5 · 1610.1002/cphc.200300942 ↗
12. Mater. Sci. Eng., R · 2009 · 64 · 110.1016/j.mser.2008.12.001 ↗
13. Appl. Phys. Rev. · 2020 · 7 · 03130610.1063/5.0005441 ↗
14. Appl. Phys. Lett. · 2005 · 87 · 05210210.1063/1.2001130 ↗
15. Org. Electron. · 2018 · 54 · 6410.1016/j.orgel.2017.12.008 ↗
16. Electron. Mater. Lett. · 2019 · 15 · 16610.1007/s13391-018-00112-9 ↗
17. Adv. Electron. Mater. · 2020 · 6 · 190087910.1002/aelm.201900879 ↗
18. Adv. Electron. Mater. · 2020 · 6 · 190120010.1002/aelm.201901200 ↗
19. Adv. Mater. · 2009 · 21 · 200710.1002/adma.200803211 ↗
20. RSC Adv. · 2014 · 4 · 523610.1039/c3ra47059h ↗
21. J. Appl. Phys. · 2011 · 110 · 09372210.1063/1.3660221 ↗
22. IEEE Electron Device Lett. · 2011 · 32 · 130210.1109/led.2011.2160249 ↗
23. IEEE Trans. Electron Devices · 2001 · 48 · 106010.1109/16.925226 ↗
24. Phys. Rev. Lett. · 2003 · 91 · 21660110.1103/physrevlett.91.216601 ↗
25. IEEE Trans. Electron Devices · 2013 · 60 · 28010.1109/ted.2012.2226887 ↗
26. J. Appl. Phys. · 2011 · 109 · 08371010.1063/1.3574661 ↗
27. J. Phys. Chem. C · 2012 · 116 · 767210.1021/jp300397f ↗
28. Appl. Phys. Lett. · 2005 · 86 · 25210410.1063/1.1949281 ↗
29. Synth. Met. · 2012 · 162 · 46010.1016/j.synthmet.2011.12.021 ↗
30. Org. Electron. · 2014 · 15 · 172410.1016/j.orgel.2014.04.039 ↗
31. Appl. Phys. Lett. · 2008 · 93 · 09330510.1063/1.2978348 ↗
32. Phys. Rev. B · 2013 · 88 · 19520510.1103/physrevb.88.195205 ↗
33. Appl. Surf. Sci. · 2016 · 388 · 39610.1016/j.apsusc.2015.12.111 ↗
34. Adv. Mater. · 2017 · 29 · 170378210.1002/adma.201703782 ↗
35. Adv. Mater. · 2020 · 32 · 200232910.1002/adma.202002329 ↗
36. Org. Electron. · 2021 · 97 · 10626610.1016/j.orgel.2021.106266 ↗