journal article·2019-02-01Open access

Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires

Samatcha Vorathamrong, Somsak Panyakeow, Somchai Ratanathammaphan, Piyasan Praserthdam

AIP Advances· Volume 9· Issue 2

Abstract

This research focuses on the impact of native SiO2 layer evolution, occurring on the surfaces of Si(111) substrates on the morphological and structural properties of self-assisted GaAs nanowires. GaAs nanowires growth were grown on Si(111) substrates, already covered with native SiO2 developing in different states with identical growth parameters including growth temperature, growth time, and Ga and As flux, using self-assisted VLS process by MBE technique. Results from nanowire samples and substrates were compared to understand the correlation between the changes in appearance of native SiO2 layer and the changes in the growth pattern of the nanowires.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor materials and interfaces · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University 1 , Bangkok 10330, Thailand

Center of Excellence on Catalysis and Catalytic Reaction Engineering, Department of Chemical Engineering, Chulalongkorn University 2 , Bangkok 10330, Thailand

Funding

Ratchadapisek Sompote Fund for Postdoctoral Scholarship Chulalongkor University · The Research Chair Grant · Chulalongkorn University · National Science and Technology Development Agency · Thailand Research Fund · National Nanotechnology Center · Office of Naval Research Global

References (17)

Show source-provided references
1. Nano Lett. · 2014 · 14 · 329310.1021/nl500704r ↗
2. Nano Lett. · 2003 · 3 · 14910.1021/nl025875l ↗
3. Nat. Photonics · 2013 · 7 · 96310.1038/nphoton.2013.303 ↗
4. IEEE J. Sel. Top. Quantum Electronics · 2011 · 17 · 111210.1109/jstqe.2010.2068280 ↗
5. Appl. Phys. Lett. · 1964 · 4 · 8910.1063/1.1753975 ↗
6. Appl. Phys. Lett. · 2008 · 92 · 06311210.1063/1.2837191 ↗
7. J. Appl. Phys. · 1990 · 68 · 127210.1063/1.347181 ↗
8. J. Appl. Phys. · 1996 · 79 · 437310.1063/1.362670 ↗
9. J. Crys. Growth · 2013 · 344 · 118
10. J. Crys. Growth · 2014 · 404 · 24610.1016/j.jcrysgro.2014.07.034 ↗
11. Molecular beam epitaxy of GaAs nanowires and their suitability for optoelectronic applications
12. Nanotechnology · 2015 · 26 · 31560110.1088/0957-4484/26/31/315601 ↗
13. Nanotechnology · 2013 · 24 · 03530410.1088/0957-4484/24/3/035304 ↗
14. Cryst. Growth Des. · 2013 · 13 · 397610.1021/cg400701w ↗
15. Phys. Rev. Lett. · 2013 · 99 · 146101
16. Nanotechnology · 2010 · 21 · 38560210.1088/0957-4484/21/38/385602 ↗
17. Nano Lett. · 2010 · 10 · 480710.1021/nl101747z ↗