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journal article·2024-08-01Open access

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Leonid Chernyak, Alfons Schulte, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Vincent Sallet, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Arie Ruzin

AIP Advances· Volume 14· Issue 8
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Source abstract

Abstract

It has recently been demonstrated that electron beam injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length with injection duration, followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) at meta-stable native defect levels in the material, which in turn blocks recombination through these levels. In this work, in contrast to previous studies, the effect of electron injection in p-type Ga2O3 was investigated using cathodoluminescence technique in situ in scanning electron microscope, thus providing insight into minority carrier lifetime behavior under electron beam irradiation. The activation energy of ∼0.3 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.
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Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, University of Central Florida 1 , Orlando, Florida 32816, USA

Department of Chemical Engineering, University of Florida 2 , Gainesville, Florida 32611, USA

Material Science and Engineering, University of Florida 3 , Gainesville, Florida 32611, USA

Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines – CNRS 4 , 45 Av. des Etats-Unis, 78035 Versailles, Cedex, France

School of Electrical Engineering, Tel Aviv University 5 , Tel Aviv 69978, Israel

Funding

National Science Foundation · United States - Israel Binational Science Foundation · North Atlantic Treaty Organization · Defense Threat Reduction Agency · Agence Nationale de La Recherche

References (22)

Show source-provided references
1. Appl. Phys. Rev. · 2018 · 5 · 01130110.1063/1.5006941 ↗
2. Adv. Electron. Mater. · 2018 · 4 · 160050110.1002/aelm.201600501 ↗
3. Adv. Electron. Mater. · 2017 · 3 · 160035010.1002/aelm.201600350 ↗
4. J. Mater. Chem. C · 2017 · 5 · 833810.1039/C7TC02221B ↗
5. Semicond. Sci. Technol. · 2016 · 31 · 03400110.1088/0268-1242/31/3/034001 ↗
6. Jpn. J. Appl. Phys. · 2016 · 55 · 1202A210.7567/JJAP.55.1202A2 ↗
7. Solid-State Electron. · 2001 · 45 · 168710.1016/s0038-1101(01)00161-7 ↗
8. AIP Adv. · 2019 · 9 · 01512710.1063/1.5079730 ↗
9. Appl. Phys. Lett. · 2022 · 120 · 23350310.1063/5.0096950 ↗
10. J. Appl. Phys. · 2006 · 100 · 08610110.1063/1.2358844 ↗
11. J. Alloys Compd. · 2023 · 969 · 17245410.1016/j.jallcom.2023.172454 ↗
12. Materials · 2022 · 15 · 116410.3390/ma15031164 ↗
13. APL Mater. · 2022 · 10 · 03110610.1063/5.0086449 ↗
14. Appl. Phys. Lett. · 2021 · 118 · 20210610.1063/5.0053301 ↗
15. Appl. Phys. Lett. · 2003 · 82 · 368010.1063/1.1578514 ↗
16. AIP Adv. · 2021 · 11 · 12501410.1063/5.0073692 ↗
17. J. Appl. Phys. · 2020 · 128 · 08570210.1063/5.0017742 ↗
18. 1971
19. Mater. Today Phys. · 2023 · 36 · 10115510.1016/j.mtphys.2023.101155 ↗
20. APL Mater. · 2018 · 6 · 09610210.1063/1.5042646 ↗
21. Appl. Phys. Lett. · 2019 · 115 · 03210110.1063/1.5108790 ↗
22. Appl. Phys. Lett. · 2021 · 118 · 20210510.1063/5.0052601 ↗