Implementing bidirectional logic with backhopping in magnetic tunnel junctions
Source abstract
Abstract
A bidirectional logic gate has been designed based on the backhopping phenomenon observed in magnetic tunnel junctions (MTJ) at high bias. The magnetization dynamics of each magnetic layer of the MTJ—having materials and geometry of a standard spin-transfer torque magnetic random access memory device—is calculated using the coupled Landau–Lifshitz–Gilbert equation-based theoretical framework. A circuit design interconnecting the MTJs has been proposed to simulate a two-input NAND gate. The results in both forward and reverse directions agree well with those found from the Boltzmann distribution, thereby demonstrating the equiprobability of all valid states.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · Advanced Data Storage Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET) , West Palashi, Dhaka 1205, Bangladesh
References (30)
Show source-provided references
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