Enhancement of spin signals by thermal annealing in silicon-based lateral spin valves
Source abstract
Abstract
The effect of thermal annealing on spin accumulation signals in silicon (Si)-based lateral spin devices is investigated. The annealing is carried out after fabrication of the spin devices, which allows us to directly compare the spin-related phenomena before and after annealing. The magnitude of non-local four-terminal signals (ΔVnl) at room temperature is increased more than two-fold after annealing at 300 °C for 1 h. The channel length dependence of ΔVnl and the Hanle signals reveal that the spin polarization of the ferromagnetic contact is increased by the annealing. In contrast, the spin diffusion length and spin lifetime in the Si channel do not change.
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Research context
OpenAlex topics: Quantum and electron transport phenomena · Magnetic properties of thin films · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Science and Engineering, Kyoto University 1 , Kyoto, Kyoto 615-8510, Japan
Advanced Products Development Center, TDK Corporation 2 , Ichikawa, Chiba 272-8558, Japan
Graduate School of Engineering Science, Osaka University 3 , Toyonaka, Osaka 560-8531, Japan
Funding
Japan Society for the Promotion of Science · Ministry of Education, Culture, Sports, Science and Technology
References (38)
Show source-provided references
1. Phys. Rev. Lett. · 2007 · 99 · 17720910.1103/physrevlett.99.177209 ↗
2. Appl. Phys. Lett. · 2008 · 93 · 16250810.1063/1.3006333 ↗
3. Nature · 2007 · 447 · 29510.1038/nature05803 ↗
4. Nat. Phys. · 2007 · 3 · 54210.1038/nphys673 ↗
5. Appl. Phys. Lett. · 2014 · 104 · 09240910.1063/1.4867650 ↗
6. Appl. Phys. Lett. · 2020 · 116 · 02240310.1063/1.5131823 ↗
7. Appl. Phys. Lett. · 2017 · 110 · 19240110.1063/1.4982966 ↗
8. Phys. Rev. Appl. · 2018 · 9 · 05400210.1103/physrevapplied.9.054002 ↗
9. Appl. Phys. Express · 2009 · 2 · 05300310.1143/apex.2.053003 ↗
10. Appl. Phys. Express · 2011 · 4 · 02300310.1143/apex.4.023003 ↗
11. Appl. Phys. Express · 2015 · 8 · 11300410.7567/apex.8.113004 ↗
12. Phys. Rev. Appl. · 2014 · 2 · 03400510.1103/physrevapplied.2.034005 ↗
13. Phys. Rev. Mater. · 2019 · 3 · 02441110.1103/physrevmaterials.3.024411 ↗
14. Phys. Rev. Appl. · 2019 · 11 · 04402010.1103/physrevapplied.11.044020 ↗
15. Phys. Rev. Appl. · 2017 · 8 · 06402310.1103/physrevapplied.8.064023 ↗
16. IEEE Trans. Magn. · 2018 · 54 · 140060410.1109/tmag.2018.2849753 ↗
17. Nature · 2007 · 447 · 57310.1038/nature05833 ↗
18. Appl. Phys. Lett. · 2004 · 84 · 230710.1063/1.1689403 ↗
19. Appl. Phys. Lett. · 1990 · 56 · 66510.1063/1.102730 ↗
20. IEEE Trans. Magn. · 2014 · 50 · 340051310.1109/tmag.2014.2325536 ↗
21. AIP Adv. · 2019 · 9 · 12532610.1063/1.5129980 ↗
22. Phys. Rev. Appl. · 2020 · 13 · 04401010.1103/physrevapplied.13.044010 ↗
23. Phys. Rev. B · 2019 · 99 · 16530110.1103/physrevb.99.165301 ↗
24. Phys. Rev. B · 2020 · 102 · 03530510.1103/physrevb.102.035305 ↗
25. Nat. Mater. · 2004 · 3 · 86210.1038/nmat1256 ↗
26. Appl. Phys. Lett. · 2011 · 99 · 10250210.1063/1.3634026 ↗
27. Appl. Phys. Lett. · 2000 · 76 · 61010.1063/1.125833 ↗
28. Phys. Rev. B · 2011 · 83 · 16541310.1103/physrevb.83.165413 ↗
29. AIP Adv. · 2016 · 6 · 07511910.1063/1.4960210 ↗
30. Appl. Phys. Lett. · 2005 · 86 · 05290110.1063/1.1787896 ↗
31. J. Appl. Phys. · 2020 · 127 · 08530610.1063/1.5132701 ↗
32. Appl. Phys. Lett. · 2011 · 98 · 26250310.1063/1.3604010 ↗
33. Phys. Rev. B · 2002 · 66 · 201202(R)10.1103/physrevb.66.201202 ↗
34. Phys. Rev. B · 2002 · 66 · 23530210.1103/physrevb.66.235302 ↗
35. Phys. Rev. B · 2019 · 99 · 06440810.1103/physrevb.99.064408 ↗
36. Appl. Phys. Lett. · 2010 · 96 · 12210110.1063/1.3367748 ↗
37. Appl. Phys. Express · 2020 · 13 · 08300210.35848/1882-0786/aba22c ↗
38. J. Appl. Phys. · 2002 · 92 · 23510.1063/1.1481974 ↗