Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes
Source abstract
Abstract
Broad emission bands due to defects in (In,Ga,Al)N laser diodes operating at 440 nm are investigated using continuous-wave and pulsed currents. In addition to known yellow–green and short-wave infrared bands, defect emissions were observed even in the medium-wave infrared range. A separation from thermal radiation is possible. When using pulsed currents, a super-linearly increasing emission occurs at ∼1150 nm, which could be attributed to amplified spontaneous emission mainly due to the electroluminescence of deep defects in the optically active region. These results may be useful in interpreting the output power bottleneck of GaN-based lasers compared to mature GaAs-based lasers.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials
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Affiliations
Key Laboratory of Polar Materials and Devices, East China Normal University 1 , 200241 Shanghai, People’s Republic of China
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie 2 , Max-Born-Str. 2A, 12489 Berlin, Germany
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics 3 , Shanghai 200083, People’s Republic of China
Funding
National Natural Science Foundation of China · Aerostatic Science Foundation
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