Strong emission of THz radiation from GaAs microstructures on Si
Source abstract
Abstract
Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak–to–peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Terahertz technology and applications · Superconducting and THz Device Technology · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Advanced Photonics Research Institute, Gwangju Institute of Science and Technology 1 , Gwangju 611005, Republic of Korea
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology 2 , Gwangju 61005, Republic of Korea
Korea Advanced NanoFab Center 3 , Suwon, Gyeonggi-do 16229, Republic of Korea
National Renewable Energy Laboratory 4 , Golden, CO 80401, United States
Funding
Gwangju Institute of Science and Technology · National Research Foundation of Korea
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