Spin transport in benzofurane bithiophene based organic spin valves
Source abstract
Abstract
In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlOx buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology, electrical transport and oxygen contamination of the BF3 layer. A study of magnetic hysteresis cycles evidences spin-valve behaviour. Transport properties are indicative of unshorted devices with non-linear I-V characteristics. Finally we report a magnetoresistance of 3% at 40 K and 10 mV in a sample with a 50 nm thick spacer layer, using an AlOx buffer layer.
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Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Advanced Memory and Neural Computing · Organic Electronics and Photovoltaics
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Affiliations
CNRS 1 , LAAS, 7 avenue du Colonel Roche, F-31400 Toulouse, France
Université de Toulouse; UPS 2 , INSA, INP, ISAE; LAAS; CEMES, F-31077 Toulouse France
Université Paul Sabatier 3 LAPLACE, , 118, route de Narbonne 31062 Toulouse Cedex 9 France
Université d’Angers 4 MOLTECH-Anjou, UMR CNRS 6200, , 2 Bd Lavoisier 49045 ANGERS Cedex France
CNRS 5 , CEMES-CNRS UPR 8011, 29 rue Jeanne Marvig, BP 94347, FR-31055 Toulouse Cedex 4 France
CNRS 6 , CEMES-ONERA, NMH, 2 avenue Edouard Belin, FR-31055 Toulouse Cedex 4 France
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