journal article·2022-04-01Open access

Origin of magnetic field-induced magnetic anisotropy in amorphous CoFeB thin films

Lu Yuan, Baomin Wang, Dezhi Zha, Chenxu Liu, Mengchao Li, Yali Xie, Huali Yang, Yanwei Cao, Hui Xu, Run-Wei Li

AIP Advances· Volume 12· Issue 4

Abstract

Magnetic anisotropy (MA) is an important property of magnetic materials, which not only determines the orientation of the magnetic moment in the magnetic material but also influences the working frequency of magnetoelectric devices. Unrevealing the origin of MA has become an important topic and attracts lasting interest. Here, we report a quite significant magnetic field-induced uniaxial MA in amorphous CoFeB thin films containing double ferromagnetic atoms. The thickness independence of MA was obtained by observing a series of hysteresis loops and magnetic domains. The MA is proved subtly to be related to the variation of orbital magnetic moment acquired by ferromagnetic resonance. Furthermore, we found that atoms combine into clusters and incline to an order in amorphous CoFeB thin films with field-induced MA. Based on these experimental results, we proposed a direction-like order model to interpret the origin of magnetic field-induced MA in amorphous CoFeB thin films well.
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Research context

OpenAlex topics: Magnetic properties of thin films · Theoretical and Computational Physics · Magnetic Properties and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Materials Science, School of Materials Science and Engineering, Shanghai University 1 , Shanghai 200072, People’s Republic of China

CAS Key Laboratory of Magnetic Materials and Devices and Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 2 , Ningbo 315201, People’s Republic of China

School of Physical Science and Technology, Ningbo University 3 , Ningbo 315211, People’s Republic of China

Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 4 , Ningbo 315201, People’s Republic of China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 5 , Beijing 100049, People’s Republic of China

Funding

National Natural Science Foundation of China · K. C. Wong Education Foundation

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