journal article·2021-04-01Open access

Tunnel magnetoresistance in magnetic tunnel junctions with FeAlSi electrode

Shoma Akamatsu, Mikihiko Oogane, Zhenhu Jin, Masakiyo Tsunoda, Yasuo Ando

AIP Advances· Volume 11· Issue 4

Abstract

(001)-oriented FeAlSi polycrystalline thin films with a flat surface and B2-ordered structure were grown on thermally oxidized SiO2 substrates using MgO buffer layers. The FeAlSi thin films composition-adjusted to the Sendust alloy exhibited a low coercivity (Hc) after the annealing process. We utilized these films as bottom electrodes of magnetic tunnel junctions (MTJs) and characterized their tunnel magnetoresistance (TMR) effect. The TMR effect was 35.9% at room temperature. In addition, the TMR ratio increased to 51.0% when a thin CoFeB layer was inserted into the FeAlSi/MgO interface, without degrading the small switching field of the FeAlSi electrode. These MTJs with a small switching field and relatively high TMR ratio using the FeAlSi electrode are promising for highly sensitive MTJ-based magnetic sensor devices.
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Research context

OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Applied Physics, Graduate School of Engineering, Tohoku University 1 , Sendai 980-8579, Japan

Center for Science and Innovation in Spintronics (Core Research Cluster), Organization for Advanced Studies, Tohoku University 2 , Sendai 980-8577, Japan

Center for Spintronics Research Network, Tohoku University 3 , Sendai 980-8577, Japan

Department of Electronic Engineering, Graduate School of Engineering, Tohoku University 4 , Sendai 980-8579, Japan

Funding

Japan Science and Technology Agency · The Center for Science and Innovation in Spintronics · Center for Spintronics Research Network, Tohoku University · Tohoku University

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