Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

We investigated the relationship between the band-offset, the gate leakage current, and the interface states density on SiO2/4H-SiC (000-1) structures via hard x-ray photoelectron spectroscopy and electrical measurements. From the observed band-offset, we found that conduction band offset (ΔEc) depended on the oxidation procedure, but valence band-offset (ΔEv) did not. In addition, ΔEv was larger than ΔEc, indicating that electron tunneling was more predominant than hole tunneling. SiO2 prepared by a dry oxidation procedure exhibited the highest gate leakage current onset and the highest interface states density and the largest ΔEc, whereas a wet oxidation procedure produced the lowest gate leakage current onset, the lowest interface states density, and the smallest ΔEc. Oxygen annealing after wet oxidation effectively increased gate leakage current onset, which increased the interface states density and the ΔEc. These results were related to hydrogen atoms and carbon related defects at the SiO2/4H-SiC (000-1) interface.