journal article·2018-05-01Open access

Study of cavity effect in micro-Pirani gauge chamber with improved sensitivity for high vacuum regime

Guohe Zhang, Junhua Lai, Yanmei Kong, Binbin Jiao, Shichang Yun, Yuxin Ye

AIP Advances· Volume 8· Issue 5

Abstract

Ultra-low pressure application of Pirani gauge needs significant improvement of sensitivity and expansion of measureable low pressure limit. However, the performance of Pirani gauge in high vacuum regime remains critical concerns since gaseous thermal conduction with high percentage is essential requirement. In this work, the heat transfer mechanism of micro-Pirani gauge packaged in a non-hermetic chamber was investigated and analyzed compared with the one before wafer-level packaging. The cavity effect, extremely important for the efficient detection of low pressure, was numerically and experimentally analyzed considering the influence of the pressure, the temperature and the effective heat transfer area in micro-Pirani gauge chamber. The thermal conduction model is validated by experiment data of MEMS Pirani gauges with and without capping. It is found that nature gaseous convection in chamber, determined by the Rayleigh number, should be taken into consideration. The experiment and model calculated results show that thermal resistance increases in the molecule regime, and further increases after capping due to the suppression of gaseous convection. The gaseous thermal conduction accounts for an increasing percentage of thermal conduction at low pressure while little changes at high pressure after capping because of the existence of cavity effect improving the sensitivity of cavity-effect-influenced Pirani gauge for high vacuum regime.
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Research context

OpenAlex topics: Mechanical and Optical Resonators · Advanced MEMS and NEMS Technologies · Analytical Chemistry and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electronic and Information Engineering, Xi’an Jiaotong University 1 , Xi’an 710049, P. R. China

Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences 2 , Beijing 100029, China

Funding

National Natural Science Foundation of China

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