journal article·2017-03-01Open access

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

Hongyi Mi, Hao-Chih Yuan, Jung-Hun Seo, Orlando H. Auciello, Derrick C. Mancini, Robert W. Carpick, Sergio P. Pacheco, Anirudha V. Sumant, Zhenqiang Ma

AIP Advances· Volume 7· Issue 3

Abstract

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · Force Microscopy Techniques and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

University of Wisconsin-Madison 1 Department of Electrical and Computer Engineering, , Madison, Wisconsin 53706, USA

Argonne National Laboratory 2 Center for Nanoscale Materials, , Argonne, Illinois 60439, USA

University of Texas-Dallas 3 Now with Department of Materials Science and Engineering, , Richardson, Texas 75080, USA

4Department Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

Freescale Semiconductor, Inc. 5 Packaging Solutions Development, , 1300 N Alma School Rd, Chandler, Arizona 85224, USA

Funding

Defense Advanced Research Projects Agency · U.S. Department of Energy

References (20)

Show source-provided references
1. J. Mater. Sci. · 2003 · 38 · 411510.1023/a:1026369320215 ↗
2. Annu. Rev. Mater. Res. · 2007 · 37 · 9310.1146/annurev.matsci.36.062705.134551 ↗
3. 2015
4. J. Phys. Condens. Matter · 2004 · 16 · R53910.1088/0953-8984/16/16/r02 ↗
5. Biomed. Microdevices · 2007 · 9 · 78710.1007/s10544-007-9090-2 ↗
6. Diam. Relat. Mater. · 2009 · 18 · 59610.1016/j.diamond.2008.09.016 ↗
7. Adv. Mater. · 2005 · 17 · 103910.1002/adma.200401264 ↗
8. Phys. Rev. B · 2007 · 76 · 23542910.1103/physrevb.76.235429 ↗
9. Diam. Relat. Mater. · 2001 · 10 · 195210.1016/s0925-9635(01)00385-5 ↗
10. Diam. Relat. Mater. · 2010 · 19 · 69910.1016/j.diamond.2010.03.015 ↗
11. IEEE Microw. Mag. · 2007 · 8 · 6110.1109/mmm.2007.907816 ↗
12. IEEE Electron Device Lett. · 1985 · 6 · 36910.1109/edl.1985.26157 ↗
13. IEEE Trans. Electron Devices · 2005 · 52 · 208110.1109/ted.2005.854287 ↗
14. Proc. SPIE · 2009 · 7318 · 73181710.1117/12.822794 ↗
15. J. Appl. Phys. · 2012 · 111 · 12432810.1063/1.4729798 ↗
16. Chem. Phys. Lett. · 2006 · 430 · 34510.1016/j.cplett.2006.08.137 ↗
17. IEEE Trans. Electron Devices · 1988 · 35 · 210.1109/16.2434 ↗
18. Surf. Eng. Appl. Electrochem. · 2013 · 49 · 51710.3103/s1068375513060070 ↗
19. Phys. Status Solidi C · 2010 · 7 · 79310.1002/pssc.200982839 ↗
20. IEICE Trans. Electron. · 1996 · 79 · 6