Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
Source abstract
Abstract
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of the Ryukyus 1 Graduate School of Science and Engineering, , 1 Senbaru, Okinawa 903-0213, Japan
2e-tec Inc., Sadowara, Miyazaki 880-0303, Japan
References (20)
Show source-provided references
1. Appl. Phys. Lett. · 1967 · 10 · 5510.1063/1.1754844 ↗
2. Appl. Phys. Lett. · 1995 · 66 · 48110.1063/1.114063 ↗
3. Sens. Actuator A-Phys. · 1999 · 76 · 15210.1016/S0924-4247(98)00375-6 ↗
4. IEEE Trans. Magn. · 2005 · 41 · 366110.1109/TMAG.2005.854789 ↗
5. J. Jpn. Soc. Powder Powder Metall. · 2014 · 61 · S33510.2497/jjspm.61.S335 ↗
6. Appl. Phys. Lett. · 2015 · 106 · 25160210.1063/1.4922990 ↗
7. Semicond. Sci. Technol. · 1993 · 8 · S42410.1088/0268-1242/8/1S/093 ↗
8. J. Korean Phys. Soc. · 2011 · 58 · 157710.3938/jkps.58.1577 ↗
9. SHINKU · 1976 · 19 · 30410.3131/jvsj.19.304 ↗
10. Appl. Phys. Lett. · 1993 · 63 · 96410.1063/1.109859 ↗
11. Appl. Phys. Lett. · 1985 · 46 · 38310.1063/1.95640 ↗
12. Mater Trans. · 2005 · 46 · 258410.2320/matertrans.42.2584 ↗
13. Appl. Phys. Lett. · 1989 · 54 · 101610.1063/1.100784 ↗
14. Vacuum · 1996 · 47 · 23910.1016/0042-207X(95)00208-1 ↗
15. Appl. Phys. Lett. · 2007 · 90 · 20210410.1063/1.2740579 ↗
16. J. Appl. Phys. · 1962 · 33 · 252610.1063/1.1729011 ↗
17. Jpn. J. Appl. Phys. · 2010 · 49 · 03CA1010.1143/jjap.49.03ca10 ↗
18. J. Crys. Growth · 2000 · 213 · 4010.1016/S0022-0248(00)00340-7 ↗
19. Appl. Surf. Sci. · 1998 · 126 · 23110.1016/S0169-4332(97)00695-8 ↗
20. J. Phys. Chem. Solids · 1988 · 49 · 117910.1016/0022-3697(88)90173-4 ↗