journal article·2020-02-01Open access

Ultrahigh-pressure fabrication of single-phase α-PbO2-type TiO2 epitaxial thin films

Yuki Sasahara, Koki Kanatani, Hiroaki Asoma, Masayuki Matsuhisa, Kazunori Nishio, Ryota Shimizu, Norimasa Nishiyama, Taro Hitosugi

AIP Advances· Volume 10· Issue 2

Abstract

Materials that are thermodynamically stable at ultrahigh pressures (>10 GPa) often exhibit unique physical properties. However, few studies have addressed the fabrication of epitaxial thin films of ultrahigh-pressure phases. Herein, we combine epitaxial thin film growth techniques with ultrahigh-pressure synthetic methods. We demonstrate the synthesis of single-phase epitaxial thin films of an ultrahigh-pressure polymorph of TiO2, α-PbO2-type TiO2. A rutile TiO2(100) epitaxial thin film is used as a precursor, and a structural phase transition is induced at 8 GPa and 800–1000 °C. This study demonstrates a new synthetic route to obtain ultrahigh-pressure-phase materials. The fabrication of epitaxial thin film ultrahigh-pressure phases paves the way for investigating the physical properties that arise at surfaces and interfaces of materials.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials and Chemical Technology, Tokyo Institute of Technology 1 , 2-12-1, Ookayama, Meguro, Tokyo 152-8552, Japan

PRESTO, Japan Science and Technology Agency 2 , 4-1-8, Honcho, Kawaguchi, Saitama 332-0012, Japan

Laboratory for Materials and Structures, Tokyo Institute of Technology 3 , 4259, Nagatsuta, Midori, Yokohama, Kanagawa 226-8503, Japan

Funding

Japan Society for the Promotion of Science · Precursory Research for Embryonic Science and Technology · Core Research for Evolutional Science and Technology · Tokyo Institute of Technology

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