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journal article·2019-08-01Open access

Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode

Y. Goto, T. Yanase, T. Shimada, M. Shirai, T. Nagahama

AIP Advances· Volume 9· Issue 8
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Source abstract

Abstract

In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR). The material of which the electrodes are composed is of great importance, because TMR is very sensitive to the electronic states of the electrodes. Additionally, structural defects at the interface also have a significant influence on TMR. In this study, we employ B2-Fe3Sn as the magnetic electrode of MTJs. The use of Fe3Sn could solve the problem of lattice mismatch between Fe and MgO. However, the presence of dissimilar atoms in the electrodes or interface oxidation could be a source of defects at the interface. We find that MTJs with Fe3Sn exhibit a TMR of 50% and an asymmetric bias dependence.
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Research context

OpenAlex topics: Magnetic properties of thin films · Heusler alloys: electronic and magnetic properties · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Graduate School of Chemical Sciences and Engineering, Hokkaido University 1 , Sapporo 060-8628, Japan

Graduate School of Engineering, Hokkaido University 2 , Sapporo 060-8628, Japan

Research Institute of Electrical Communication (RIEC), Tohoku University 3 , Sendai 980-8577, Japan

Center for Spintronics Research Network (CSRN), Tohoku University 4 , Sendai 980-8577, Japan

Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku Univeristy 5 , Sendai 980-8577, Japan

Funding

Center for Spintronics Research Network · Japan Society for the Promotion of Science · Institute for Chemical Research, Kyoto University

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