Reversible metallization and carrier transport behavior of In2S3 under high pressure
Source abstract
Abstract
The electrical transport properties of indium trisulfide (In2S3) under high pressure were investigated using the in situ Hall-effect and temperature dependent resistivity measurements. Resistivity, Hall coefficient, carrier concentration, and mobility were obtained at pressures up to 41.6 GPa. Pressure induced metallization of In2S3 occurred at approximately 6.8 GPa. This was determined by measuring temperature dependent resistivity. The metallization transition was also determined from compression electrical parameters, and the decompression electrical parameters indicated that the metallization was a reversible transition. The main cause of the sharp decline in resistivity was the increase in carrier concentration at 6.8 GPa. Superconductivity was not observed at the pressures (up to 32.5 GPa) and temperatures (100–300 K) used in the experiment.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Chalcogenide Semiconductor Thin Films · Iron-based superconductors research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and Automation, Tianjin Polytechnic University 1 , Tianjin 300387, People’s Republic of China
State Key Laboratory of Superhard Materials, College of Physics, Jilin University 2 , Changchun 130012, People’s Republic of China
Department of Mechanical Engineering, Texas Tech University 3 , Lubbock, Texas 79409, United States of America
School of Science, Tianjin Polytechnic University 4 , Tianjin 300387, People’s Republic of China
Funding
Open Project of State Key Laboratory of Superhard Materials · Program for Innovative Research Team in University of Tianjin · Science & Technology Develement Fund of Tianjin Education Commission for Higher Education · National Natural Science Foundation of China · Natural Science Foundation of Tianjin City
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