Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
Source abstract
Abstract
The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.
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Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, National Chiao Tung University 1 , 1001 University Road, Hsinchu 300, Taiwan
Department of Electronics Engineering, National Chiao Tung University 2 , 1001 University Road, Hsinchu 300, Taiwan
International College of Semiconductor Technology, National Chiao Tung University 3 , 1001 University Road, Hsinchu 300, Taiwan
Funding
Chung-Shan Institute of Science and Technology
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