journal article·2017-02-01Open access

Atom probe microscopy of zinc isotopic enrichment in ZnO nanorods

C. N. Ironside, D. W. Saxey, W. D. A. Rickard, C. Gray, E. McGlynn, S. M. Reddy, N. A. Marks

AIP Advances· Volume 7· Issue 2

Abstract

We report on atomic probe microscopy (APM) of isotopically enriched ZnO nanorods that measures the spatial distribution of zinc isotopes in sections of ZnO nanorods for natural abundance natZnO and 64Zn and 66Zn enriched ZnO nanorods. The results demonstrate that APM can accurately quantify isotopic abundances within these nanoscale structures. Therefore the atom probe microscope is a useful tool for characterizing Zn isotopic heterostructures in ZnO. Isotopic heterostructures have been proposed for controlling thermal conductivity and also, combined with neutron transmutation doping, they could be key to a novel technology for producing p-n junctions in ZnO thin films and nanorods.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · ZnO doping and properties · Advanced Materials Characterization Techniques

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Affiliations

Curtin University 1 Department of Physics and Astronomy, , Bentley, Perth, 6102 WA, Australia

Curtin University 2 Geoscience Atom Probe, Advanced Resource Characterisation Facility, John De Laeter Centre, , Building 301, Bentley, WA 6102, Australia

Dublin City University 3 School of Physical Sciences, National Centre for Plasma Science and Technology, , Glasnevin, Dublin 9, Ireland

Curtin University 4 Department of Applied Geology, , Bentley, WA 6102, Australia

Funding

Science and Industry Endowment Fund

References (27)

Show source-provided references
1. J. Appl. Phys. · 1995 · 77 · 285710.1063/1.358700 ↗
2. 2013
3. J. Appl. Phys. · 2005 · 98 · 04130110.1063/1.1992666 ↗
4. Appl. Radiat. Isot. · 2009 · 67 · 116710.1016/j.apradiso.2009.02.063 ↗
5. Semicond. Sci. Technol. · 1990 · 5 · 31910.1088/0268-1242/5/4/007 ↗
6. J. Appl. Phys. · 2014 · 115 · 24370610.1063/1.4885439 ↗
7. ACS Appl. Mater. Interfaces · 2015 · 7 · 889410.1021/acsami.5b01564 ↗
8. Appl. Phys. Lett. · 2012 · 101 · 02990110.1063/1.4736950 ↗
9. Appl. Phys. Lett. · 2009 · 94 · 02210610.1063/1.3067868 ↗
10. J. Electron. Mater. · 2012 · 41 · 80110.1007/s11664-011-1803-x ↗
11. J. Appl. Phys. · 2015 · 118 · 21570310.1063/1.4936167 ↗
12. J. Appl. Phys. · 2013 · 113 · 02610110.1063/1.4773675 ↗
13. Nano Lett. · 2015 · 15 · 388510.1021/acs.nanolett.5b00708 ↗
14. J. Cryst. Growth · 2015 · 429 · 610.1016/j.jcrysgro.2015.07.003 ↗
15. Met. Mater. Int · 2016 · 22 · 3410.1007/s12540-015-5360-3 ↗
16. Microsc. Microanal · 2005 · 11
17. 2013
18. Annu. Rev. Mater. Res. · 2012 · 42 · 110.1146/annurev-matsci-070511-155007 ↗
19. Mater. Sci. Semicond. Process. · 2015 · 40 · 89610.1016/j.mssp.2015.07.093 ↗
20. J. Phys. Chem. C · 2011 · 115 · 1768810.1021/jp2047823 ↗
21. Microsc. Microanal. · 2014 · 20 · 52610.1017/S1431927614004358 ↗
22. Met. Mater. Int. · 2013 · 19 · 111710.1007/s12540-013-5029-8 ↗
23. Appl. Phys. Lett. · 2015 · 107 · 06210510.1063/1.4928625 ↗
24. Pure Appl. Chem. · 2011 · 8310.1351/PAC-REP-10-06-02 ↗
25. Appl. Phys. Lett. · 2009 · 95 · 03410310.1063/1.3182351 ↗
26. Phys. Status Solidi A · 2016 · 213 · 54910.1002/pssa.201532469 ↗
27. New J. Phys. · 2014 · 16 · 01502110.1088/1367-2630/16/1/015021 ↗