journal article·2016-03-01Open access

Sharpening of the 6.8 nm peak in an Nd:YAG laser produced Gd plasma by using a pre-formed plasma

Yong Tian, Xiaolin Song, Zhuo Xie, Jian Gao, Yinping Dou, Bochao Li, Jingquan Lin, Toshihisa Tomie

AIP Advances· Volume 6· Issue 3

Abstract

For effective use of a laser-produced-plasma (LPP) light source, an LPP is desired to emit a narrow spectral peak because the reflection spectrum of multilayer mirrors for guiding emission from the source is very narrow. While a Gd plasma has been studied extensively as an extreme ultraviolet (EUV) light source at around 6.8 nm, where La/B4C multilayer is reported to have a high reflectivity with a bandwidth of about 0.6 %, all previous works using an Nd:YAG laser reported very broad spectra. This paper reports the first narrowing of the 6.8 nm peak in the case of using an Nd:YAG laser to generate a Gd plasma by using a pre-pulse. The best peak narrowing is observed when a pre-formed plasma is heated by a 1064 nm main laser pulse with a duration of 10 ns at the irradiation density of 4x 1011 W/cm2 at a delay time of 50 ns after the pre-pulse irradiation. The observed spectral width of about 0.3 nm is about one fifth of the value for no pre-formed plasma. The peak wavelength of the 6.8 nm band shifted to a longer wavelength side and the peak was broadened both for lower and higher laser irradiation density. It is discussed that this robustness of the peak position of the 6.8 nm Gd peak against temperature change is suitable to achieve a narrow bandwidth from an LPP generated on solid. The observed spectra are compared with those previously reported in various conditions.
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Research context

OpenAlex topics: Laser-induced spectroscopy and plasma · Laser Design and Applications · Solid State Laser Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Changchun University of Science and Technology 1 School of Science, , No.7089, Weixing Road, Changchun, 13022, China

National Institute of Advanced Industrial Science and Technology (AIST) 2 Nanoelectronics Research Institute, , Central 2, 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8562, Japan

Funding

Science and Technology Department of Changchun City · National Natural Science Foundation of China

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