Thermal electric effects in Fe|GaAs|Fe tunnel junctions
Source abstract
Abstract
We study the spin polarized thermoelectric effects on Fe|GaAs|Fe tunnel junction using a generalized Landauer-Büttiker formalism, where the energy flow is described on the same footing as the electric current. The Seebeck coefficient of tunnel junction will change sign as the GaAs thickness increases. We demonstrate the thermally induced STT on Fe|GaAs|Fe tunnel junction is robust against the interfacial defects and is non-negligible.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
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Affiliations
Beijing Normal University 1 Department of Physics, , Beijing 100875, China
Henan Polytechnic University 2 Department of Physics and Chemistry, , Jiaozuo 454000, China
Funding
National Natural Science Foundation of China
References (47)
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