Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property
Source abstract
Abstract
Magnetic tunnel junctions (MTJs) with (001)-oriented D03-FeAlSi epitaxial films, which have both soft magnetic properties and surface flatness, were fabricated and characterized. A tunnel magnetoresistance (TMR) ratio of 121% was observed, and a relatively low switching field was also confirmed, reflecting the soft magnetic property of FeAlSi. However, the results of the cross-sectional TEM image of the MTJ and the bias dependence of the TMR ratio indicate that the FeAlSi/MgO interface is probably oxidized. Therefore, since an insertion layer at the interface can suppress oxidation and further improve the TMR ratio, MTJs using FeAlSi epitaxial films are promising structures suitable for applications such as MTJ-based magnetic sensors and worthy of further investigation.
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Research context
OpenAlex topics: Magnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Applied Physics, Graduate School of Engineering, Tohoku University 1 , Sendai 980-8579, Japan
Center for Science and Innovation in Spintronics (Core Research Cluster), Organization for Advanced Studies, Tohoku University 2 , Sendai 980-8577, Japan
Center for Spintronics Research Network, Tohoku University 3 , Sendai 980-8577, Japan
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University 4 , Sendai 980-8579, Japan
Funding
Strategic Promotion of Innovative R and D · Center for Spintronics Research Network, Tohoku University · Japan Society for the Promotion of Science · Tohoku University
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