journal article·2021-03-01Open access

Origin of blue luminescence in Mg-doped GaN

Jing Wang, Xiaodan Wang, Wanzhu Shu, Xionghui Zeng, Jiafan Chen, Ke Xu

AIP Advances· Volume 11· Issue 3

Abstract

In this work, dual acceptor-bound exciton peaks are observed by low-temperature photoluminescence. The peaks correspond to the dual Mg-related acceptor levels in GaN based on the Haynes rule. By calibrating the energy-level structure, a mechanism for the origin of blue luminescence (BL) in Mg-doped GaN is proposed. The BL band is separated by thermal treatment at different temperatures, confirming the rationality of the dual-factor origin of the BL band. As the annealing temperature increases, the PL spectrum and the p-type conductivity of Mg-doped GaN also change. The experimental results indicate that there is not necessarily a relationship between the BL band and p-type conductivity in GaN grown by metalorganic chemical vapor deposition.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026, People’s Republic of China

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123, People’s Republic of China

Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology 3 , Suzhou 215009, People’s Republic of China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Natural Science Fund of Jiangsu Province

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