Molecular dynamics studies on spark plasma sintering of Ge–Si based thermoelectric material

The development of new fabrication technologies for Ge–Si thermoelectric materials requires a corresponding theoretical description of physical processes lying behind the synthesis. In the present paper, we investigated the interdiffusion of Si and Ge atoms at the Ge/Si interface, which takes place during spark plasma sintering of Ge and Si powders for fabrication of thermoelectric bulk. The calculation was performed using numerical simulation based on the classical molecular dynamics method. The diffusion coefficients of Si in Ge and vice versa were found at sintering temperatures of 900 K–1300 K and an external pressure of 7 MPa. The calculation results were used to analyze the experimental data derived from the measurements of Ge and Si profiles at the interface of thin Ge/Si plates subjected to spark plasma sintering at the temperature of 1160 K (887 °C). The comparison of measured and calculated diffusion profiles has shown good agreement with one another.