Dopant activation and photoresponses of boron-doped silicon by self-assembled molecular monolayers
Source abstract
Abstract
Self-assembled molecular monolayer doping is an emerging doping technique. In this work, we investigated the activation rate and photoresponses of boron doped silicon by self-assembled molecular monolayer doping. By using low temperature Hall effect measurements and by secondary ion mass spectroscopy, we find that the activation rate of boron in these samples is in the range of 91%–54%, depending on the doping concentration. Interestingly, the photoresponsivity of the boron doped samples is also significantly higher than that of the phosphorus doped samples even though the same doping technique is used. The intriguing photoresponses are closely related to the trapping of photogenerated minority carriers by the defects in the p-type silicon.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Michigan-Shanghai Jiao Tong University Joint Institute, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, School of Electrical and Electronic Engineering, Shanghai Jiao Tong University , Shanghai 200240, China
Funding
National Natural Science Foundation of China
References (17)
Show source-provided references
1. Molecular monolayers for conformal, nanoscale doping of InP nanopillar photovoltaics10.1063/1.3585138 ↗
2. Chemical functionalisation of silicon and germanium nanowires10.1039/c1jm11028d ↗
3. Monolayer doping via phosphonic acid grafting on silicon: Microscopic insight from infrared spectroscopy and density functional theory calculations10.1002/adfm.201202808 ↗
4. Silicon doped by molecular doping technique: Role of the surface layers of doped Si on the electrical characteristics10.1016/j.mssp.2015.08.017 ↗
5. Toward conformal damage-free doping with abrupt ultrashallow junction: Formation of Si monolayers and laser anneal as a novel doping technique for InGaAs nMOSFETs10.1109/ted.2014.2306934 ↗
6. 2011
7. Synthesis and characterization of P δ-layer in SiO2 by monolayer doping10.1088/0957-4484/27/7/075606 ↗
8. 2014
9. Controlled nanoscale doping of semiconductors via molecular monolayers10.1038/nmat2058 ↗
10. Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing10.1021/nl8032526 ↗
11. Controlling the dopant dose in silicon by mixed-monolayer doping10.1021/am5079368 ↗
12. Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers10.1038/s41467-017-02564-3 ↗
13. Controlled doping by self-assembled dendrimer-like macromolecules10.1038/srep41299 ↗
14. Nanoscale nitrogen doping in silicon by self-assembled monolayers10.1038/srep12641 ↗
15. Electronic defect levels in relaxed, epitaxial p-type Si1-xGex layers produced by Mev proton irradiation10.1063/1.365554 ↗
16. A photoconductor intrinsically has no gain10.1021/acsphotonics.8b00805 ↗
17. Dynamics of charge carriers in silicon nanowire photoconductors revealed by photo Hall effect measurements10.1021/acsnano.8b00004 ↗