journal article·2019-01-01Open access

A hysteresis loop in electrical resistance of NbHx observed above the β−λ transition temperature

Yuki Sasahara, Ryota Shimizu, Hiroyuki Oguchi, Kazunori Nishio, Shohei Ogura, Hitoshi Morioka, Shin-ichi Orimo, Katsuyuki Fukutani, Taro Hitosugi

AIP Advances· Volume 9· Issue 1

Abstract

We investigate the electron transport properties and structures of β-NbHx(010) epitaxial thin films on Al2O3(001) substrates with a variety of hydrogen contents. NbHx epitaxial thin films with x ≥ 0.77 exhibit a hysteresis loop in their resistance near room temperature. Notably, this hysteresis loop appears above the β–λ phase transition temperature. Detailed analysis of the temperature dependence of these structures suggests that the short-range ordering of hydrogen rearrangement in the λ-phase remains locally above the transition temperature, inducing the hysteresis in the resistance.
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Research context

OpenAlex topics: Physics of Superconductivity and Magnetism · Superconducting Materials and Applications · Superconductivity in MgB2 and Alloys

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials and Chemical Technology, Tokyo Institute of Technology 1 , Meguro, Tokyo 152-8552, Japan

PRESTO, Japan Science and Technology Agency 2 , Kawaguchi, Saitama 332-0012, Japan

WPI-Advanced Institute for Materials Research (AIMR), Tohoku University 3 , Sendai, Miyagi 980-8577, Japan

Institute of Industrial Science, The University of Tokyo 4 , Meguro, Tokyo 153-8505, Japan

X-ray Division, Bruker Japan 5 , Yokohama 221-0022, Japan

Institute for Materials Research, Tohoku University 6 , Sendai, Miyagi 980-8577, Japan

Funding

Core Research for Evolutional Science and Technology · Precursory Research for Embryonic Science and Technology

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