Quantum dynamics of charge state in silicon field evaporation
Source abstract
Abstract
The charge state of an ion field-evaporating from a silicon-atom cluster is analyzed using time-dependent density functional theory coupled to molecular dynamics. The final charge state of the ion is shown to increase gradually with increasing external electrostatic field in agreement with the average charge state of silicon ions detected experimentally. When field evaporation is triggered by laser-induced electronic excitations the charge state also increases with increasing intensity of the laser pulse. At the evaporation threshold, the charge state of the evaporating ion does not depend on the electrostatic field due to the strong contribution of laser excitations to the ionization process both at low and high laser energies. A neutral silicon atom escaping the cluster due to its high initial kinetic energy is shown to be eventually ionized by external electrostatic field.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Materials Characterization Techniques · Diamond and Carbon-based Materials Research · Laser-induced spectroscopy and plasma
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tokyo University of Science Department of Physics, , 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
Funding
Ministry of Education, Culture, Sports, Science, and Technology
References (35)
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