Effect of barrier thickness on photoelectric properties of InGaN/GaN asymmetric multiple-quantum-well structure light-emitting diode
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials
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Affiliations
School of Optoelectronic and Communication Engineering, Xiamen University of Technology 1 , Xiamen 361024, China
Fujian Provincial Key Laboratory of Optoelectronic Technologies and Devices 2 , Xiamen 361024, China
Department of Electronic Engineering, Optoelectronics Engineering Research Center, College of Electronic Science and Technology (National Model Microelectronics College), Xiamen University 3 , Xiamen 361005, China
School of Electronic and Information Engineering, Beihang University 4 , Beiijng 100083, China
Xiamen AnMaiXin Automation Technology Co., Ltd. 5 , Xiamen 361024, China
Funding
Natural Science Foundation of Fujian Province · Youth Innovation Foundation of Xiamen City · The Science and Technology Innovation Program for Graduate Student of Xiamen University of Technology · Scientific Research Climbing Project of Xiamen University of Technology