Hybrid CMOS-PCM temperature sensor
Source abstract
Abstract
In this paper, we propose a hybrid CMOS and phase-change memory (PCM)-relaxation-oscillator based circuit for temperature-sensing applications. Unlike conventional CMOS temperature sensors based on ring- or relaxation-oscillators, the proposed sensor does not require any curvature calibration technique for linearity improvement of the thermal response. The presented system explores the temperature dependence of Ovonic-threshold-switching voltage (Vth) and DC OFF state resistance (ROFF) of a PCM device. The proposed temperature sensor exhibits a resolution of ∼0.04 °C (for the 0 °C to 80 °C temperature range) with 0.51 nJ energy consumption per conversion in simulations.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Thin-Film Transistor Technologies · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016, India
Funding
Science and Engineering Research Board · Ministry of Human Resource Development · Indian Institute of Technology Delhi
References (47)
Show source-provided references
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