Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory
Abstract
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
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Affiliations
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, People’s Republic of China
National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices, Key Laboratory of Digital Medical Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University 2 , Baoding 071002, People’s Republic of China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 3 , Beijing 100049, People’s Republic of China
Funding
Training and Introduction of Hight-Level Innovative Talents of Hebei University · The Hundred Persons Plan of Hebei Province · The Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province · The National Science Foundation of China