Tunable ferromagnetic resonance in La-Co substituted barium hexaferrites at millimeter wave frequencies
Source abstract
Abstract
Transmittance measurements have been performed on La-Co substituted barium hexaferrites in millimeter waves. Broadband millimeter-wave measurements have been carried out using the free space quasi-optical spectrometer, equipped with a set of high power backward wave oscillators covering the frequency range of 30 – 120 GHz. Strong absorption zones have been observed in the millimeter-wave transmittance spectra of all La-Co substituted barium hexaferrites due to the ferromagnetic resonance. Linear shift of ferromagnetic resonance frequency as functions of La-Co substitutions have been found. Real and imaginary parts of dielectric permittivity of La-Co substituted barium hexaferrites have been calculated using the analysis of recorded high precision transmittance spectra. Frequency dependences of magnetic permeability of La-Co substituted barium hexaferrites, as well as saturation magnetization and anisotropy field have been determined based on Schlömann’s theory for partially magnetized ferrites. La-Co substituted barium hexaferrites have been further investigated by DC magnetization to assess magnetic behavior and compare with millimeter wave data. Consistency of saturation magnetization determined independently by both millimeter wave absorption and DC magnetization have been found for all La-Co substituted barium hexaferrites. These materials seem to be quite promising as tunable millimeter wave absorbers, filters, circulators, based on the adjusting of their substitution parameters.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic Properties and Synthesis of Ferrites · Electromagnetic wave absorption materials · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, Tufts University 1 , Medford, MA 02155, USA
Department of Electrical and Computer Engineering, Northeastern University 2 , Boston, MA 02115, USA
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China 3 , Chengdu 610054, China
Funding
National Natural Science Foundation of China
References (21)
Show source-provided references
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