journal article·2013-07-01Open access

Competitive In and Ga incorporations for InxGa1-xN (0.29<x<0.36) nanorods grown at a moderate temperature

S. M. Hamad, D. P. Norman, Q. Y. Chen, F. Keles, H. W. Seo

AIP Advances· Volume 3· Issue 7

Abstract

The kinetics of In and Ga incorporation into wurtzite InxGa1−xN nanorods, grown by plasma-assisted MBE under N-rich conditions at a moderate temperature, has been systematically investigated with Ga-flux set as a growth parameter at three distinct values while varying In-flux. The interplay of Ga and In fluxes in their contributions to the incorporation was found to disagree with the empirical Böttcher's formula, of which the reliability is based on the assumption of preeminent Ga incorporation. The competition between Ga and In for incorporations involves, we believe, the displacement of In from the weaker In-N bonds by Ga to form the Ga-N bonds at high In and Ga fluxes.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · ZnO doping and properties

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Affiliations

University of Arkansas at Little Rock 1 Department of Physics and Astronomy, , Little Rock, AR 72204, USA

National Sun Yat-Sen University 2 Department of Physics, Center for Nanoscience and Nanotechnology, , Kaohsiung, Taiwan, Republic of China , and Department of Physics, Texas Center for Superconductivity, , Houston, TX 77204, USA

University of Houston 2 Department of Physics, Center for Nanoscience and Nanotechnology, , Kaohsiung, Taiwan, Republic of China , and Department of Physics, Texas Center for Superconductivity, , Houston, TX 77204, USA

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