DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film
Source abstract
Abstract
The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm0.6Nd0.4NiO3 (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO3 substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The TMI of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 109 A•m−2 to 4.9 × 109 A•m−2. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.
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Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Advanced Condensed Matter Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Science and Technology of China 1 Department of Physics, , Hefei, Anhui 230026, China
University of Science and Technology of China 2 CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, , Hefei, Anhui 230026, China
University of Science and Technology of China 3 National Synchrotron Radiation Laboratory & School of Nuclear Science and Technology, , Hefei, Anhui 230026, China
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