journal article·2014-12-01Open access

A study of vacancy defects related to gray tracks in KTiOPO4 (KTP) using positron annihilation

Yang Zhang, Jing Li, Xingzhong Cao, Jing Yang, Jiyang Wang, Huaidong Jiang

AIP Advances· Volume 4· Issue 12

Abstract

For the first time to our knowledge, positron annihilation spectroscopy (PAS) was used to study vacancy defects in KTiOPO4 (KTP) single crystals. Positron annihilation lifetime spectroscopy combined with dielectric measurements identified the existence of oxygen vacancies and reflected the concentration of vacancy defects in three samples. The vacancy defects in KTP do not consist of monovacancies, but rather vacancy complexes. Doppler broadening indicates that the vacancy defects are distributed uniformly. A relationship is established where a crystal with a low oxygen vacancy concentration and a highly balanced stoichiometry has a higher resistance to gray track formation.
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Research context

OpenAlex topics: Muon and positron interactions and applications · Semiconductor materials and devices · Luminescence Properties of Advanced Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shandong University 1 State Key Laboratory of Crystal Materials, , Jinan 250100, China

Chinese Academy of Sciences 2 Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, , Beijing 100049, China

Funding

The National Basic Research Program of China · The National Natural Science Foundation of China

References (33)

Show source-provided references
1. Proc. SPIE · 1995 · 2379 · 20647610.1117/12.206476 ↗
2. Appl. Phys. Lett. · 1995 · 66 · 342810.1063/1.113376 ↗
3. Phys. Rev. B · 2007 · 76 · 14410910.1103/PhysRevB.76.144109 ↗
4. Phys. Rev. B · 2009 · 79 · 01410210.1103/PhysRevB.79.014102 ↗
5. Appl. Phys. Lett. · 2012 · 101 · 17190510.1063/1.4764013 ↗
6. J. Appl. Phys. · 2000 · 88 · 624110.1063/1.1315624 ↗
7. J. Cryst. Growth · 2010 · 312 · 105910.1016/j.jcrysgro.2009.10.019 ↗
8. 1999
9. Phys. Rev. Lett. · 2002 · 88 · 10550610.1103/PhysRevLett.88.105506 ↗
10. Phys. Rev. Lett. · 2003 · 91 · 20550210.1103/PhysRevLett.91.205502 ↗
11. J. Cryst. Growth · 2009 · 311 · 307510.1016/j.jcrysgro.2009.01.051 ↗
12. Phys. Rev. Lett. · 1997 · 79 · 303010.1103/PhysRevLett.79.3030 ↗
13. Photothermal common-path interferometry (PCI): new developments10.1117/12.814813 ↗
14. Appl. Phys. Lett. · 1986 · 48 · 80910.1063/1.96677 ↗
15. Phys. Rev. B · 2010 · 81 · 06410210.1103/PhysRevB.81.064102 ↗
16. J. Cryst. Growth · 1987 · 85 · 29510.1016/0022-0248(87)90238-7 ↗
17. Chem.Mater. · 1993 · 5 · 121110.1021/cm00033a005 ↗
18. J. Cryst. Growth · 1991 · 109 · 36710.1016/0022-0248(91)90205-J ↗
19. Phys. Rev. Lett. · 1996 · 77 · 340710.1103/PhysRevLett.77.3407 ↗
20. Proc. of SPIE · 2007 · 6473 · 64731210.1117/12.697892 ↗
21. Phys. Rev. Lett. · 2007 · 99 · 08550210.1103/PhysRevLett.99.085502 ↗
22. J. Appl. Phys. · 2005 · 97 · 04350410.1063/1.1840102 ↗
23. J. Appl. Phys. · 2003 · 93 · 248110.1063/1.1539915 ↗
24. Radiat Phys Chem · 2003 · 68 · 68910.1016/S0969-806X(03)00442-0 ↗
25. Phys.Stat.Sol.(a) · 1986 · 93 · 66510.1002/pssa.2210930232 ↗
26. J. Phys. Soc. Jpn. · 1993 · 62 · 18310.1143/JPSJ.62.183 ↗
27. Appl. Phys. Lett. · 1986 · 49 · 91710.1063/1.97483 ↗
28. J. Cryst. Growth · 2010 · 312 · 105510.1016/j.jcrysgro.2009.10.016 ↗
29. Phys. Rev. B · 1999 · 59 · 666110.1103/PhysRevB.59.6661 ↗
30. J. Appl. Phys. · 2001 · 89 · 5649
31. Ferroelectrics · 1991 · 115, 7
32. Appl. Phys. Lett. · 1995 · 67 · 194110.1063/1.114575 ↗
33. Nucl Instrum Meth B · 1998 · 141 · 47210.1016/S0168-583X(98)00142-6 ↗