Resonant exciton excitation photoluminescence and dynamics in a GaAs/AlAs multiple quantum well with internal electric field
Source abstract
Abstract
The stability of excitons with large oscillator strengths at room temperature has been of great significance in device applications. In this paper, we report the effects of the ultrafast dissociation of excitons confined in a quantum well on optical characteristics. The photoluminescence spectra show components of higher energy than the excitation energy and a nonlinear increment of the intensity. Furthermore, the spectrally resolved pump–probe signals at the exciton energies elucidate the change in the exciton position. These results indicate the importance of the exciton stability in optical devices, in particular emission type, including terahertz wave, based on excitons.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Strong Light-Matter Interactions · Spectroscopy and Laser Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University 1 , 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
Electronics and Nanoscale Engineering, James Watt School of Engineering, University of Glasgow 2 , Glasgow G12 8LT, United Kingdom
Funding
Masuya-Kinen Basic Research Foundation · Hyogo Foundation for Science and Technology · JSPS International Research Fellow · Japan Society for the Promotion of Science · Support Center for Advanced Telecommunications Technology Research Foundation
References (42)
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