Surface morphology of GaN nucleation layer grown by MOCVD with different carrier gas
Source abstract
Abstract
GaN nucleation layers were grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD) with different carrier gas. The morphology of nucleation layer which is crucial to GaN crystal quality was systematically studied using nitrogen and hydrogen as carrier gas. The GaN nucleation layer tends to form larger islands under H2 ambient, and forms higher density nucleation islands and thicker nucleation layer under N2 ambient.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Electronics Engineering, Shanxi University 1 , Taiyuan 030006, China
Collaborative Innovation Center of Extreme Optics, Shanxi University 2 , Taiyuan, Shanxi 030006, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Shanxi Province · Natural Science Foundation of Shaanxi Province
References (24)
Show source-provided references
1. The 2018 GaN power electronics roadmap10.1088/1361-6463/aaaf9d ↗
2. White light-emitting diodes: History, progress, and future10.1002/lpor.201600147 ↗
3. Perspective: Toward efficient GaN-based red light emitting diodes using europium doping10.1063/1.5010762 ↗
4. Growth defects in GaN films on sapphire: The probable origin of threading dislocations10.1557/jmr.1996.0071 ↗
5. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy10.1063/1.1415043 ↗
6. Temperature effects for GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy10.1016/j.jallcom.2017.06.224 ↗
7. The preparation and properties of vapor-deposited single-crystal-line GaN10.1063/1.1652845 ↗
8. Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy10.7567/jjap.55.05fa04 ↗
9. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers10.1063/1.116883 ↗
10. Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template10.1063/1.2363148 ↗
11. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency10.1016/j.jcrysgro.2014.02.039 ↗
12. M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy10.1063/1.2894509 ↗
13. Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate10.1021/am5087775 ↗
14. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer10.1063/1.96549 ↗
15. GaN growth using GaN buffer layer10.1143/jjap.30.l1705 ↗
16. Effect of reactor pressure on the growth rate and structural properties of GaN films10.1007/s11434-009-0300-6 ↗
17. The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer10.1016/j.jcrysgro.2007.01.019 ↗
18. The influence of coalescence time on unintentional doping in GaN/sapphire10.1016/j.jcrysgro.2008.11.015 ↗
19. Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD10.1016/j.jcrysgro.2016.11.061 ↗
20. A new approach towards low-pressure metalorganic vapor phase epitaxy of (AlGa)As using triethylgallium and dimethylethylaminealane10.1016/0022-0248(94)91095-2 ↗
21. Very high compositional homogeneity of 1.55 µm strain-compensated InGaAsP MQW structures by MOVPE under N2 atmosphere10.1016/s0022-0248(98)00663-0 ↗
22. Nucleation mechanism for epitaxial growth of GaN on patterned sapphire substrates10.1016/j.jallcom.2014.05.035 ↗
23. Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth10.1016/j.jcrysgro.2005.02.036 ↗
24. Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: A computational fluid dynamics simulation study10.1143/jjap.44.874 ↗