Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4
Abstract
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
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Affiliations
Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences 1 , Beijing 100049, China
University of Chinese Academy of Sciences 2 , Beijing 100049, China
AVIC Beijing Institute of Aeronautical Materials 3 , Beijing 100095, China
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University 4 , Beijing 100084, P.R. China
INFN - Laboratori Nazionali di Frascati 5 , Via E. Fermi 40, Frascati 00044, Italy
RICMASS, Rome International Center for Materials Science Superstripes 6 , Via dei Sabelli 119A, 00185 Rome, Italy