High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · ZnO doping and properties
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Affiliations
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS 1 , Suzhou 215123, China
University of Chinese Academy of Sciences 2 , Beijing 100049, China
School of Nano Technology and Nano Bionics, University of Science and Technology of China 3 , Suzhou 215123, China
School of Materials Science and Engineering, Nanjing University of Science and Technology 4 , Nanjing 210094, China
Suzhou Powerhouse Electronics Co., Ltd 5 , Suzhou 215123, China
Funding
The Key Research and Development Program of Jiangsu Province · The National Key Research and Development Program of China · The National Key Scientific Instrument and Equipment Development Projects of China