journal article·2017-05-01Open access

Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

H. Honjo, S. Ikeda, H. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, T. Endoh

AIP Advances· Volume 7· Issue 5

Abstract

We investigated properties of perpendicular-anisotropy magnetic tunnel junctions (p-MTJs) with [Co/Pt]-multilayer based synthetic ferrimagnetic reference (SyF) layer at elevated annealing temperature Ta from 350°C to 400°C. Shift field HS defined as center field of minor resistance versus magnetic field curve of the MTJs increased with increase of Ta from 350°C to 400°C. The variation of HS is attributed to the variation of saturation magnetic moment in the SyF reference layer. Cross sectional energy dispersive X-ray spectroscopy analysis revealed that Fe element of CoFeB in the reference layer diffuses to Co/Pt multilayers in the SyF reference layer.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Magnetic properties of thin films · Magnetic Properties and Applications · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Tohoku University 1 Center for Innovative Integrated Electronic Systems, , Sendai 980-0845, Japan

JST-ACCEL 2 , Saitama 332-0012, Japan

Tohoku University 3 Center for Spintronics Integrated Systems, , Sendai 980-8577, Japan

Tohoku University 4 Center for Spintronics Research Network, , Sendai 980-8577, Japan

Tohoku University 5 Graduate School of Engineering, , Sendai 980-8579, Japan

Tohoku University 6 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , Sendai 980-8577, Japan

Tohoku University 7 WPI-Advanced Institute for Materials Research, , Sendai 980-8577, Japan

Funding

Japan Science and Technology Agency

References (12)

Show source-provided references
1. 2013 · 110
2. 2015 · 1
3. 2014 · 1
4. 2014 · 1
5. 2014 · 1
6. Nature Mater. · 2010 · 9 · 72110.1038/nmat2804 ↗
7. Appl. Phys. Lett. · 2012 · 101 · 02241410.1063/1.4736727 ↗
8. Appl. Phys. Lett. · 2014 · 105 · 06240310.1063/1.4892924 ↗
9. Jap. J. Appl. Phys. · 2014 · 53 · 04EM0210.7567/JJAP.53.04EM02 ↗
10. 2015 · T161
11. IEEE. Trans. Mag. · 2016 · 52 · 340110410.1109/TMAG.2016.2518203 ↗
12. J. Appl. Phys. · 2015 · 117 · 17B72110.1063/1.4916037 ↗