Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer
Source abstract
Abstract
We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.
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Research context
OpenAlex topics: Magnetic properties of thin films · Physics of Superconductivity and Magnetism · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chinese Academy of Sciences 1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, , Ruoshui Road398, Suzhou 215123, China
Chinese Academy of Sciences 2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, , Beijing 100190, China
Avalanche Technology 3 , Fremont, California 94538, United States
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